產品分類/ Products
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- PT8P2309 觸控 A/D 型 8-Bit MCU
- PT8P2308 觸控 A/D 型 8-Bit MCU
- ET7428 1Ω Dual SPDT Negative Signal Handing Analog Switch
- ET7222 High-Speed USB 2.0(480Mbps) Switch
- ET5228H 0.6Ω Dual SPDT Negative Signal Handing Analog Switch
- ET5223 0.5Ω Dual SPDT Analog Switch
- HTR6916 共陰極16x9陣列LED 驅動器
- HTR7198(S), HTR7144(S) 帶自動呼吸功能的18x
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- RY6050-ADJ Series 500mA Adjustable High-Speed Low Power LDO
- RY6050 Series 500mA High PSRR, Low Noise, Low Power LDO
MOSFET
產品名稱:NP4953CSR P+P -30V 5.5A+5.5A
型號: NP4953CSR
產片介紹:30V Dual P-Channel Enhancement Mode MOSFETDescription The NP4953CSR uses advanced trench technology to provide excellent RDS(ON) ,low gate charge and operation w
產品名稱:NP4409SR P管 -30V -15A
型號: NP4409SR
產片介紹:40V N-Channel Enhancement Mode MOSFETDescription The NP4009SR uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequenc
產品名稱:NP4407SR P管 -30V -12A
型號: NP4407SR
產片介紹:30V P-Channel Enhancement Mode MOSFETDescription The NP4407SR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge It ca
產品名稱:NP4419SR P管 -30V -9A
型號: NP4419SR
產片介紹:30V P-Channel Enhancement Mode MOSFETDescription The NP4419SR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge It ca
產品名稱:NP8205MR N+N 20V 6+6A
型號: NP8205MR
產片介紹:20V Dual N-Channel Enhancement Mode MOSFETDescription The NP8205 uses advanced trench technology to provide excellent RDS(ON) ? V , low gate charge and operati
產品名稱:NP2301AVR P管 -20V -2.8A
型號: NP2301AVR
產片介紹:20V P-Channel Enhancement Mode MOSFETDescription General Features The NP2301AVR uses advanced trench technology to provide excellent RDS(ON), low gate charge and
產品名稱:NP2300MR-M N管 20V 6A
型號: NP2300MR-M
產片介紹:N-Channel Enhancement Mode MOSFETDescription The NP2300MR uses advanced trench technology to provide excellent RDS(ON) General Features , low gate charge and high
產品名稱:NP3400MR N管 30V 6.2A
型號: NP3400MR
產片介紹:N-Channel Enhancement Mode MOSFETDescription The NP3400 uses advanced trench technology to provide excellent RDS(ON) ? V , low gate charge and high density cel








